Canales-Pozos, S. A. Rios-Jara, D. Alvarez-Fregoso, O. Alvarez-Perez, M. A. Garcia, M. Martinez Sanchez, E. Juarez-Islas, J. A. Zelaya-Angel, O. Mendoza-Alvarez, J. G. <br/><br/>
Morphological, optical, and photoluminescent characteristics of GaAs/sub 1-x/N/sub x/ nanowhiskered thin films. 

 -  2001. 
 - Vol.79, No.16, 15 Oct., pp.2555-2557. 
 = Applied Physics Letters 
<br/><br/><label>Subjects--Topical Terms: </label><br/>Atomic force microscopy<br/>Gallium arsenide<br/>Gallium compounds<br/>Grain size<br/>III-V semiconductors<br/>Nanostructured materials<br/>Photoluminescence<br/>Spectral line shift<br/>Sputtered coatings<br/>Visible spectra<br/>Whiskers (crystal)
<br/><br/><label>Subjects--Facted Index Terms: </label><br/>Photoluminescent characteristics<br/>Optical characteristics<br/>Morphological characteristics<br/>GaAs/sub 1-x/N/sub x/ nanowhiskered thin films<br/>Solid-solution<br/>Glass substrates<br/>Radio-frequency sputtering technique<br/>Atomic-force microscopy images<br/>Whisker shape<br/>Substrate temperature<br/>Surface morphology<br/>Whisker-like features<br/>Nanowhisker diameter<br/>Optical absorption spectra<br/>Band-gap energy blueshift<br/>Strong quantum-confinement effects<br/>Blue range<br/>Quantum-size effects<br/>GaAsN