000 | 01198nam a2200289zi 4500 | ||
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005 | 20230621111019.0 | ||
008 | 021029c 2002sz a 000 0 eng d | ||
020 | _a087849894x (2 vol. set) | ||
035 | _aMX001000936645 | ||
041 | _aENG | ||
050 | 4 |
_aTK7871.15S56 _bS55 2001 |
|
084 | _aSerie | ||
111 | 2 |
_aInternational Conference on Sic and Related Materials _d(2001 : _cTsukuba, Japon) |
|
245 | 0 | 0 |
_aSilicon carbide and related materials : _bICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, october 28 - november 2, 2001 / _cedited by S. Yoshida ... [y otros.] |
264 | 1 |
_aSwitzerland : _bTrans Tech Publications, _cC2002- |
|
300 |
_a2 volĂșmenes : _bilustraciones |
||
650 | 4 |
_aCarbono de silicio _vCongresos |
|
650 | 4 |
_aNitruros _vCongresos |
|
650 | 4 |
_aCarbono de silicio _xPelĂculas delgadas _vCongresos |
|
650 | 4 |
_aSemiconductores de banda ancha _vCongresos |
|
650 | 4 |
_aCultivo de cristales _vCongresos |
|
700 | 1 |
_aYoshida, Satohiro, _d1936- , _eeditor |
|
336 |
_atexto _2rdacontent |
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337 |
_asin medio _2rdamedia |
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338 |
_avolumen _2rdacarrier |
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999 |
_c11791 _d11791 |