| 000 | 00969nam a2200265zi 4500 | ||
|---|---|---|---|
| 005 | 20230621111041.0 | ||
| 008 | 030909c----2004nyua-----b----001-0-eng-- | ||
| 020 | _a1591690234 (encuadernado en tela : papel libre de ácido) | ||
| 035 | _aMX001001015963 | ||
| 040 |
_aDLC _bspa _cDLC _dDLC _dUNAMX |
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| 050 | 0 | 0 |
_aTP261.C3 _bS55 |
| 084 | _aGeneral | ||
| 245 | 0 | 0 |
_aSilicon carbide : _bmaterials, processing, and devices / _cedited by Zhe Chuan Feng and Jian H. Zhao |
| 264 | 1 |
_aNew York : _bTaylor & Francis, _cc2004 |
|
| 300 |
_ax, 389 páginas : _bilustraciones ; |
||
| 490 | 0 |
_aOptoelectronic properties of semiconductors and superlattices ; _vv. 20 |
|
| 650 | 0 | _aCarburo de silicio | |
| 650 | 0 |
_aCarburo de silicio _xPropiedades eléctricas |
|
| 700 | 1 |
_aFeng, Zhe Chuan, _eeditor |
|
| 700 | 1 |
_aZhao, Jian H., _eeditor |
|
| 336 |
_atexto _2rdacontent |
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| 337 |
_asin medio _2rdamedia |
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| 338 |
_avolumen _2rdacarrier |
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| 999 |
_c12477 _d12477 |
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